PART |
Description |
Maker |
TC58NVG5D2FTA00 |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
TH58NVG5S0FTA20 |
32 GBIT (4G × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC58NVG2D4BFT00 |
4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
NAND02GR3B2BZA1 NAND02GR4B2BZA6 NAND02GR3B2BZB1 NA |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面1.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
MU9C1480A MU9C1480A-12DC MU9C1480A-12DI MU9C1480A- |
THE 1024 X 64-BIT LANCAM FACILITATES NUMEROUS 1024 X 64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (CAM)
|
ETC
|
TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
LC87F5164A |
8-Bit Single Chip Microcontroller with 64KB(65535 ×8 bits) FEPROM and 1024 Byte(1024 ×8 bits) RAM On Chip(8位单片微控制器(带片4K5535 ×8 bit)字节闪速EPROM024
|
Sanyo Electric Co.,Ltd.
|
NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
RX2.7GBIT/S TX2.7GBIT/S V23832-T2131-M101 V23832-T |
PAROLI 2 Tx AC, 2.7 Gbit/s 帕罗2个发送,交流2.7千兆/ Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 2.7 Gbit/s, Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 2.7 Gbit/s, multistandard electrical interface PAROLI 2 Tx AC, 1.25 Gbit/s
|
Infineon Technologies AG
|
V23814-K1306-M130 M130 V23814-K1306-MXXX V23815-K1 |
1.25 Gbit/s Rx Receiver 1.25 Gbit/s Tx Transmitter From old datasheet system Parallel Optical Link: PAROLI Tx AC
|
Infineon
|